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Quest for the Ultimate Sub-50 nm CMOS Transistor Structure(PDF)

南京师范大学学报（工程技术版）[ISSN:1006-6977/CN:61-1281/TN]

Issue:
2003年04期
Page:
51-54
Research Field:
Publishing date:

Info

Title:
Quest for the Ultimate Sub-50 nm CMOS Transistor Structure
Author(s):
Rambhatla A 1;  Hackler D R 2;  Parke S A 1
( 1. Department of Electrical & Computer Engineering, Boise State University, 83725, Idaho, USA)
( 2.Ameri can Semiconductor Inc, 83725, Idaho, USA)
Keywords:
CMOS;  non- classical CMOS structure;  transistor structure
PACS:
TN432
DOI:
-
Abstract:
In this paper, the work is introduced on investigation on non- classical CMOS structure in the quest to find the u-l timate transistor structure that will permit evolutionary improvements of the existing CMOS technology base.

References:

[ 1] Wong H S P. Design and performance considerations for sub-0. 1μm doube-l gate SOI MOSFETs[ A] . International Electronic Device Meeting, 1994.
[ 2] Wong H S P, Chan K K, Taur Y. Sel-f aligned doube-l gate MOSFET with a 25 nm thick channel[ A] . International Electronic Device Meeting, 1997. 427~ 430.
[ 3] Wong H S P, Frank D J, Solomon P M. Device design considerations for double-gate, ground plane, and single- gated ultra- thin SOI MOSFETs at the 25 nm channel length[ A] . International Electronic Device Meeting, 1998. 407~ 410.

Memo

Memo:
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Last Update: 2013-04-29