参考文献/References:
[ 1] K im Jonghoon, Yeon Soonchang, Jeon Yunkwang, et a.l Nano- indentation m ethod for themeasurem ent o f the Poissoncs ra tio o f MEMS th in film s[ J]. Sensors and Actuators A, 2003, 10( 8): 20-27.
[ 2] T sa iH sinchang, FangW eileun. De term in ing the Po issoncs ratio of th in film m ater ia ls using resonantm e thod[ J]. Sensors and A ctuato rs A, 2003( 6) : 77-83.
[ 3] Cho SW, Chasiotis I. E lastic properties and representative volum e elem ent o f po ly cry-sta lline silicon fo rMEMS [ J]. Exper-i m en talM echanics DOI, 2006( 3): 23-29.
[ 4] Baeka Changwook, K im a Yongkw eon, Ahnb Yoom in, e t a .l M easurem ent of the m echan ical properties of e lectroplated go ld thin film s using m icrom ach ined beam structures[ J]. Sensors and Actuators A, 2005, 11( 7): 17-27.
[ 5] Tang Yu jie, Cheng Jing. Utra-sensitiv e h ighly reproduc ib le film stress characterization using flex ib le suspended thin silicon p la tes and loca l curvature m easurements[ J]. JM ic rom eshM icroeng, 2007, 17( 1): 23-30.
[ 6] Ding J N, M eng Y G, W en S Z. Spec im en size e ffect on m echanical properties o f po lysilicon m icrocantilever beam sm easured by de flection using a nano indente r[ J]. M ater Sci Eng B, 2001, 8( 3): 42-47.
[ 7] K im Jaehyun, LeeH ak joo, Choa Sunghoon. Research trends form echanical character iz-ation o fM EMS m ater ials in Korea: Research needs and new developm ents[ J]. Transaction on E lectrica l and E lectron icEng inee ring IEE Trans, 2008( 3): 255-259.