[1]赵奕昕,刘守城,颜 伟,等.基于Levenberg-Marquardt算法的碳化硅MOSFET建模研究[J].南京师范大学学报(工程技术版),2022,22(03):030-37.[doi:10.3969/j.issn.1672-1292.2022.03.005]
　Zhao Yixin,Liu Shoucheng,Yan Wei,et al.Study on Modeling of Silicon Carbide MOSFET Based on Levenberg-Marquardt Algorithm[J].Journal of Nanjing Normal University(Engineering and Technology),2022,22(03):030-37.[doi:10.3969/j.issn.1672-1292.2022.03.005]
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基于Levenberg-Marquardt算法的碳化硅MOSFET建模研究
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南京师范大学学报（工程技术版）[ISSN:1006-6977/CN:61-1281/TN]

卷:
22卷
期数:
2022年03期
页码:
030-37
栏目:
电气工程
出版日期:
2022-09-15

文章信息/Info

Title:
Study on Modeling of Silicon Carbide MOSFET Based on Levenberg-Marquardt Algorithm
文章编号:
1672-1292(2022)03-0030-08
作者:
赵奕昕1; 2; 刘守城1; 2; 颜 伟1; 2; 祝志博1; 2; 居 铭1; 2
(1.南京师范大学南瑞电气与自动化学院,江苏 南京 210023)(2.南京师范大学江苏省电气装备与电磁兼容工程实验室,江苏 南京 210023)
Author(s):
Zhao Yixin1; 2; Liu Shoucheng1; 2; Yan Wei1; 2; Zhu Zhibo1; 2; Ju Ming1; 2
(1.NARI School of Electrical and Automation Engineering,Nanjing Normal University,Nanjing 210023,China)(2.Jiangsu Electrical Equipment EMC Engineering Laboratory,Nanjing Normal University,Nanjing 210023,China)
关键词:
碳化硅MOSFET; 静态特性建模; 动态行为模型; 寄生非线性电容; Levenberg-Marquardt算法
Keywords:
Silicon Carbide MOSFET; static characteristic modeling; dynamic behavior model; parasitic nonlinear capacitance; Levenberg-Marquardt algorithm
分类号:
TM23
DOI:
10.3969/j.issn.1672-1292.2022.03.005
文献标志码:
A
摘要:
为了更快速准确地对碳化硅MOSFET功率器件进行开关行为预测与分析,需要建立其静态和动态行为模型. 静态模型包括不同温度下的转移特性曲线和输出特性曲线,以及寄生非线性电容曲线等. 提出了一种基于EKV公式改进的曲线拟合公式和一种新的非线性电容拟合公式,利用Levenberg-Marquardt算法进行参数拟合,建模速度快,模型误差小. 动态模型在考虑封装寄生电感和寄生非线性电容等非理想条件下,分别建立器件导通和关断过程每一个阶段的栅源极电压、漏源极电压、肖特基二极管电压、栅极电流和漏极电流的电路微分方程组,再以每一个阶段结束时的状态变量作为下一个阶段的初始条件. 采用4阶龙格库塔法求解上述微分方程组的数值解,并与LTspice仿真波形进行对比分析. 结果表明,上述建模方法能较好地描述器件的动态行为特性.
Abstract:
In order to predict and analyze the switching behavior of silicon carbide MOSFET power devices more quickly and accurately,it is necessary to establish static and dynamic behavior models. The static model includes the transfer characteristic curves and the output characteristic curves at different temperatures,as well as the parasitic nonlinear capacitance curves. In this paper,an improved curve fitting formula based on the EKV formula and a new nonlinear capacitor fitting formula is proposed. The Macquart method is used for parameter fitting,which has faster modeling speed and smaller model errors. Non-ideal conditions are considered in the dynamic model,such as package parasitic inductance and parasitic nonlinear capacitance,and establishes the gate-source voltage,drain-source voltage,Schottky diode voltage,and drain current at each stage of the device turn-on and turn-off process. The differential equations of the circuit and the drain current,and then the state variables at the end of each stage are used as the initial conditions for the next stage. The fourth-order Runge-Kutta method is used to solve the numerical solution of the above-mentioned differential equations,and compared with the LTspice simulation waveform,the results show that the above-mentioned modeling method can describe the dynamic behavior of the device well.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2021-08-09.
基金项目:国家自然科学基金项目(52107005).
通讯作者:颜伟,博士,副教授,研究方向:电磁兼容. E-mail:61197@njnu.edu.cn
更新日期/Last Update: 2022-09-15