[1]Parke S A,Cole Bryan.一种克服SOI MOSFET器件自加热效应的方法(英文)[J].南京师范大学学报(工程技术版),2003,03(04):055-58.
　Parke S A,Cole Bryan,A Method to Overcome Self-Heating Effects in SOI MOSFETs[J].Journal of Nanjing Normal University(Engineering and Technology),2003,03(04):055-58.
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一种克服SOI MOSFET器件自加热效应的方法(英文)
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南京师范大学学报（工程技术版）[ISSN:1006-6977/CN:61-1281/TN]

卷:
03卷
期数:
2003年04期
页码:
055-58
栏目:
出版日期:
2003-12-30

文章信息/Info

Title:
A Method to Overcome Self-Heating Effects in SOI MOSFETs
作者:
Parke S A1 ;  Cole Bryan 1;  2
( 1. 美国爱达荷州BOISE 州立大学电气与计算机系, 83725, 爱达荷州)
( 2. 美国Micron 公司, 83707, 爱达荷州)
Author(s):
Parke S A 1; Cole Bryan 1; 2
( 1. Department of Electrical & Computer Engineering, Boise State University, 83725, Idaho, USA)
( 2. Micron Technology Inc, 83707, Idaho, USA)
关键词:
SOI硅一绝缘体;  MOSFET器件;  自加热效应
Keywords:
SOI;  MOSFET;  sel-f heating effect
分类号:
TN386
摘要:
MOS器件的自加热效应将影响器件的性能 .漏极电流将减小 ,长时间的可靠性也会受到影响 .在SOI器件中 ,自加热甚至比埋葬式氧化物引起的问题更严重 .本文通过在SOI和基片之间增加一条具有高导热和低导电的路径 ,减小了自加热的负面效应
Abstract:
Self heating of a MOS device will reduce performance. Drain current decreases and long term reliability can be affected. In SOI devices, sel-f heating is an even greater problem due to the buried oxide. By adding a path from SOI to substrate that has a high thermal conductivity and low electrical conductivity , the negative effects of sel-f heating can be reduced.

参考文献/References:

[ 1] Garner D M, Chen Y, Sabesan L, et al . A novel flash EEPROM cell based on trench technology for integration within Power integrated circuits[ J] . IEEE Electron Device Letters, 21( 5) : 236~ 238.

备注/Memo

备注/Memo:
Biography: Parke S A, American, born in 1960; Ph. D. ; associate professor at Department of Electrical & Computer Engineering, Boise State University; his research interest includes IC design, device modeling and characterization.
更新日期/Last Update: 2013-04-29