[1]葛益娴,王鸣,戎华,等.硅的反应离子刻蚀工艺参数研究[J].南京师范大学学报(工程技术版),2006,06(03):079-82.
　GE Yixian,WANG Ming,RONG Hua.Study on the Technological Parameters for the Reactive Ion Etching of Si[J].Journal of Nanjing Normal University(Engineering and Technology),2006,06(03):079-82.
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硅的反应离子刻蚀工艺参数研究
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南京师范大学学报（工程技术版）[ISSN:1006-6977/CN:61-1281/TN]

卷:
06卷
期数:
2006年03期
页码:
079-82
栏目:
出版日期:
2006-09-30

文章信息/Info

Title:
Study on the Technological Parameters for the Reactive Ion Etching of Si
作者:
葛益娴;王鸣;戎华;
南京师范大学光电技术江苏省重点实验室, 江苏南京210097
Author(s):
GE Yixian; WANG Ming; RONG Hua
Jiangsu Province Key Laboratory of Optoelectronic Technology,Nanjing Normal University,Nanjing 210097,China
关键词:
反应离子刻蚀;  刻蚀速率;  优化工艺参数
Keywords:
reactive ion etching;  etch ing rate;  op tima l technologica l parameters
分类号:
TN305.7
摘要:
对硅的反应离子刻蚀(R IE)工艺参数进行了研究.通过控制变量法,得出了刻蚀速率与射频功率、刻蚀气体压强和刻蚀气体流量之间的关系曲线.结果表明,随着射频功率的增加,刻蚀速率不断增加;刻蚀速率开始随刻蚀气体压强的增加而加快,压强超过一定值时,刻蚀速率反而减小;刻蚀速率在刻蚀气体流量较小时,随气体流量的增加而加快,在较大的气体流量下反而降低.通过比较不同条件下的刻蚀结果,得到了刻蚀硅的优化工艺条件.最后用DEKTAK 6M型台阶仪测出了优化工艺条件下的刻蚀深度和粗糙度.测试结果表明在优化工艺条件下刻蚀速率快,粗糙度低.
Abstract:
The technological pa rame ters for the Reactive Ion E tch ing of Si are stud ied. By controlling va riab les, we obta in the re la tion between etching rate and RF powe r, etch ing gas pressure, flow of the gas. It is demonstrated tha t the etch ing rate increases continua llyw ith the increased RF power, that the etch ing rate in itia lly increases with the in2 creasing gas pressure but decreases after 25Pa, that the etching rate increases w ith the gas flow at the low flow bu t de2 creases after 40sccm. By compar ing the different etching results, we a lso obtain the optima l technological conditions. A t last, the etching depth and roughness a re measured by the DEKTAK 6M stylus profiler under the op tima l techno2 logica l conditions. The resu lts show tha t the etching rate is faster and the roughness is lower unde r the optimal techno2 logica l cond itions.

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备注/Memo

备注/Memo:
基金项目: 江苏省高新技术研究计划资助项目( BG2003024).
作者简介: 葛益娴( 19822), 女, 硕士研究生, 主要从事光学传感和微纳技术的学习与研究. E-mail: geyixian820925@ 163. com
通讯联系人: 王 鸣( 19502), 教授, 主要从事光电子和激光应用的教学与研究. E-mail:wangming@ n jnu. edu. cn
更新日期/Last Update: 2013-04-29