[1]陈向阳,周 敏,吴子成.TVS引起的LNA阻抗网络失配仿真分析[J].南京师范大学学报(工程技术版),2015,15(04):090.
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TVS引起的LNA阻抗网络失配仿真分析
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南京师范大学学报(工程技术版)[ISSN:1006-6977/CN:61-1281/TN]

卷:
15卷
期数:
2015年04期
页码:
090
栏目:
研究简报
出版日期:
2015-12-20

文章信息/Info

作者:
陈向阳1周 敏2吴子成3
(1.江苏省产品质量监督检验研究院,江苏 南京 210007)
(2.南京师范大学中北学院,江苏 南京 210023)
(3.南京师范大学附属中学,江苏 南京 210003)

参考文献/References:

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[2] HYVONEN S,JOSHI S,ROSENBAUM E. Comprehensive ESD protection for RF inputs[J]. Microelectronics reliability,2005,45(2):245-254.
[3] GRAZIOSI G,DORIOL P J,VILLAVICENCIO Y,et al. Advanced modeling techniques for system-level power integrity and EMC analysis[C]//Microelectronics and Packaging Conference,2009. European,2009:1-6.
[4] GONG K,FENG H,ZHAN R,et al. A study of parasitic effects of ESD protectionon RF Ics[J]. IEEE Trans Microw Theory Tech,2002,50(1):393-402.
[5] KERAND M D,LEE C M. Interference of ESD protection diodes on RF performance in giga-Hz RF circuits[C]//Proc IEEE Int Symp Circuits Syst,2003:297-300.
[6] LUO G X,CUI X. Equivalent circuit parameter estimation and application of TVS electrostatic discharge suppressor[J]. Proceedings of CSEE,2013,33(16):204-211.
[7] NATIONAL STANDARDIZATION ADMINISTRATION COMMITTEE of CHINA. Electromagnetic compatibility:testing and measurement techniques-electrostatic discharge immunity test:GB/T 17626.2—2006[S]. Beijing:Standard Press of China,2006(in Chinese).
[8] LIN C Y,CHU L W,TSAI S Y,et al. Design of compact ESD protection circuit for V-band RF applications in a 65-nm CMOS technology[J]. IEEE transactions on device and materials reliability,2012,12(3):554-561.
[9] KER M D,LIN C Y,HSIAO Y W. Overview on ESD protection designs of low-parasitic capacitance for RF ICs in CMOS technologies[J]. IEEE transactions on device and materials reliability,2011,11(2):207-218.

备注/Memo

备注/Memo:
收稿日期:2015-05-20.
通讯联系人:陈向阳,高级工程师,研究方向:电工理论与新技术 . E-mail:598549871@qq.com
更新日期/Last Update: 2015-12-20