|Table of Contents|

Study on the Technological Parameters for the Reactive Ion Etching of Si(PDF)

南京师范大学学报（工程技术版）[ISSN:1006-6977/CN:61-1281/TN]

Issue:
2006年03期
Page:
79-82
Research Field:
Publishing date:

Info

Title:
Study on the Technological Parameters for the Reactive Ion Etching of Si
Author(s):
GE Yixian; WANG Ming; RONG Hua
Jiangsu Province Key Laboratory of Optoelectronic Technology,Nanjing Normal University,Nanjing 210097,China
Keywords:
reactive ion etching;  etch ing rate;  op tima l technologica l parameters
PACS:
TN305.7
DOI:
-
Abstract:
The technological pa rame ters for the Reactive Ion E tch ing of Si are stud ied. By controlling va riab les, we obta in the re la tion between etching rate and RF powe r, etch ing gas pressure, flow of the gas. It is demonstrated tha t the etch ing rate increases continua llyw ith the increased RF power, that the etch ing rate in itia lly increases with the in2 creasing gas pressure but decreases after 25Pa, that the etching rate increases w ith the gas flow at the low flow bu t de2 creases after 40sccm. By compar ing the different etching results, we a lso obtain the optima l technological conditions. A t last, the etching depth and roughness a re measured by the DEKTAK 6M stylus profiler under the op tima l techno2 logica l conditions. The resu lts show tha t the etching rate is faster and the roughness is lower unde r the optimal techno2 logica l cond itions.

References:

[ 1] 格雷戈里T A 科瓦奇. 微传感器与微执行器全书[M]. 张文栋, 译. 北京: 科学出版社, 2000: 18-19.
GREGORY T A KOVACS. M icromach ined Transducers Sourcebook[M ]. Trans labe by ZHANG Wendong. Be ijing: Science Pub lish ing Company, 2000: 18-19. ( in Ch inese)
[ 2] 苏毅, 谭淞生, 孙承龙, 等. 等离子体和反应离子刻蚀硅的各向异性及均匀性实验研究[ J]. 传感技术学报, 1994( 2): 36-40.
SU Y,i TAN Songsheng, SUN Chenglong, et a .l Research on anisotropy and un iform ity in etch ing Si by using reactive ion etch2 ing and plasma etch ing systems[ J]. Journal ofT ransc luction Technology, 1994( 2): 36-40. ( in Chinese)
[ 3] 陆建祖, 魏红振, 李玉鉴, 等. 反应离子刻蚀仿真工艺的研究[ J]. 功能材料与器件学报, 2000, 6( 4) : 420-424.
LU Jianzu, WE IH ongzhen, LIYu jian, e t a .l Mode ling and s imu la tion of reactive ion etch ing technology[ J]. Journa l ofFunc2 tionalMater ials and Devices, 2000, 6( 4): 420-424. ( in Chinese)
[ 4] LEGTENBERG R, JANSEN H, DE BOER M. Anisotrop ic reactive e tch ing of silicon using SF6 /O2 /CH F3 gasmixtures[ J]. J E lectrochem Soc, 1995, 142( 6) : 2020-2028.
[ 5] 张锦, 冯伯儒, 杜春雷, 等. 反应离子刻蚀工艺因素研究[ J]. 光电工程, 1997( 24): 46-51.
ZHANG Jin, FENG Boru, DU Chun le,i et a.l Resea rch on the technolog ica l factors for the reactive ion e tch ing[ J]. Opto2E lec2 tron ic Engineer ing, 1997( 24) : 46-51. ( in Ch inese)
[ 6] 孙承龙, 戈肖鸿, 王渭源, 等. 反应离子深刻蚀(RIE) 技术的研究[ J]. 传感器世界, 1996( 5) : 31-35.
SUN Chenglong, GE X iaohong,WANGWeiyuan, et a.l Research on deep reac tive ion etching technology[ J] . SensorWorld, 1996( 5): 31-35. ( in Chinese)
[ 7] 郝慧娟, 张玉林, 卢文娟. 二氧化硅的反应离子刻蚀[ J]. 电子工业专用设备, 2005( 126): 48- 51
HAO H uijuan, ZHANG Yulin, LUWenjuan. Reactive ion etch ing of SiO2 [ J] . Equipment for E lec tron ic ProductsManufactur2 ing, 2005( 126): 48-51. ( in Chinese)
[ 8] CH INOY, PERCY B. Reactive ion etching of benzocyc lobutene p loymer films[ J]. IEEE T rans Comp PackagManufact: Tech2 nol Part C, 1997, 20( 3): 199-206.

Memo

Memo:
-
Last Update: 2013-04-29