[1]赵军伟,乔彦彬,张海峰,等.40 nm IC静态和动态 ESD测试及失效分析[J].南京师范大学学报(工程技术版),2019,19(04):008-12.[doi:10.3969/j.issn.1672-1292.2019.04.002]
　Zhao Junwei,Qiao Yanbin,Zhang Haifeng,et al.Static and Dynamic ESD Testing and Failure Analysis for 40 nm IC Products[J].Journal of Nanjing Normal University(Engineering and Technology),2019,19(04):008-12.[doi:10.3969/j.issn.1672-1292.2019.04.002]
点击复制

40 nm IC静态和动态 ESD测试及失效分析
分享到：

南京师范大学学报（工程技术版）[ISSN:1006-6977/CN:61-1281/TN]

卷:
19卷
期数:
2019年04期
页码:
008-12
栏目:
2019全国集成电路可靠性学术会议专栏
出版日期:
2019-12-31

文章信息/Info

Title:
Static and Dynamic ESD Testing and Failure Analysis for 40 nm IC Products
文章编号:
1672-1292(2019)04-0008-05
作者:
赵军伟1; 2; 乔彦彬1; 2; 张海峰1; 2; 陈燕宁1; 2; 李杰伟1; 2; 符荣杰1; 2
(1.北京智芯微电子科技有限公司,国家电网公司重点实验室 电力芯片设计分析实验室,北京 100192)(2.北京智芯微电子科技有限公司,北京市电力高可靠性集成电路设计工程技术研究中心,北京 100192)
Author(s):
Zhao Junwei1; 2; Qiao Yanbin1; 2; Zhang Haifeng1; 2; Chen Yanning1; 2; Li Jiewei1; 2; Fu Rongjie1; 2
(1.State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology,Beijing Smart-ChipMicroeletronics Technology Co.,Ltd.,Beijing 100192,China)2.Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade,Beijing Smart-ChipMicroeletronics Technology Co.,Ltd.,Beijing 100192,China)
关键词:
静电放电; 静电保护; 器件充放电模式; 激光束电阻异常侦测
Keywords:
electrical discharge; ESD protection; charged device model; OBIRCH
分类号:
TN406
DOI:
10.3969/j.issn.1672-1292.2019.04.002
文献标志码:
A
摘要:
结合电网内使用电子器件面临的复杂电磁环境,介绍芯片在静态和动态下静电放电(electrostatic discharge,ESD)的防护能力测试,分析了ESD器件充放电模式(CDM)失效的现象和定位方法. 针对40 nm LQFP64封装芯片,详细介绍ESD测试过程和失效判定分析过程,综合运用激光束电阻异常侦测、扫描电子显微镜等手段完成对失效位置的定位和失效点的精确分析. 通过测试结果分析其失效机理,ESD保护电路中的晶体管,在电阻率下降、电流密度增加导致温度升高的正反馈作用下保护电路中的晶体管发生熔断,从而导致ESD保护电路失效.
Abstract:
Considering the complex electromagnetic environment faced by the use of electronic devices in the power grid,the paper introduces the test of ESD protection ability under static and dynamic conditions. ESD charged device model(CDM)failure phenomenon and location method of failure position are analyzed. Based on LQFP64 package form IC,using 40 nm,the ESD test method and failure phenomenon determination process is discussed in detail. OBIRCH and SEM are used to locate the failure position and analyze the failure point accurately. Through the detailed test results,the failure mechanism of the transistors in the ESD protection circuit is analyzed. Under the positive feedback of the decrease of resistance and the increase of current density,the transistors in the protection circuit will fuse,which leads to the failure of the ESD protection circuit.

参考文献/References:

[1] HUANG J B,WANG G W. ESD protection design for advanced CMOS[C]//Conference on Advances in Microelectronic Device Technology. Nanjing,2001:4600.
[2]王广辉. 中国智能用电的实践与未来展望[J]. 中国电力,2012,45(1):1-5.
WANG G H. Practice and prospect of China intelligent power utilization[J]. Electical power,2012,45(1):1-5.(in Chinese)
[3]张钦,王锡凡,付敏,等. 需求响应视角下的智能电网[J]. 电力系统自动化,2009,33(17):49-55.
ZHANG Q,WANG X F,FU M,et al. Smart grid form the perspective of demand response[J]. Automation of electric power systems,2009,33(17):49-55.(in Chinese)
[4]袁琰红,陈 力,王英杰,等. 基于ESD的芯片失效分析[J]. 半导体光电,2012,33(3):397-400.
YUAN Y H,CHENG L,WANG Y J,et al. Failure analysis on IC chips based on ESD[J]. Semiconductor optoelectronics,2012,33(3):397-400.(in Chinese)
[5]戴俊夫,严明. 电子元器件失效分析技术及方法[J]. 微处理机,2015,37(4):1-3,7.
DAI J F,YAN M. Failure analysis of electronic components[J]. Microprocessor,2015,37(4):1-3,7.(in Chinese)
[6]黄龙,刘迪,陆坚,等. SOI电路可靠性筛选技术及失效机理研究[J]. 电子与封装,2013,13(12):30-34.
HUANG L,LIU D,LU J,et al. Study on reliability screening technology and failure mechanism of SOI circuits[J]. Electronics & packaging,2013,13(12):30-34.(in Chinese)
[7]MING D K,CHE H C,WEN Y L. Layout design on multi-finger MOSFET for on-chip ESD protection circuits in a 0.18-μm salicided CMOS process[J]. 8th IEEE International Conference on Electronics,Circuits and Systems. Malta,2001:361-364.
[8]张冰,柴常春,杨银堂,等. 一种新型结构栅耦合ggNMOS ESD保护电路研究[J]. 电路与系统学报,2011,16(5):84-89.
ZHANG B,CHAI C C,YANG Y T,et al. Study on a new structure gc-ggNMOS ESD protection circuit[J]. Journal of circuits and systems,2011,16(5):84-89.(in Chinese)

相似文献/References:

[1]赵阳,等.电子设备静电放电抗扰度性能优化研究[J].南京师范大学学报(工程技术版),2011,11(02):001.
　Zhao Yang,Chu Pengchao,et al.Research on the ESD Immunity Performance of a Weighing Controller[J].Journal of Nanjing Normal University(Engineering and Technology),2011,11(04):001.
[2]窦爱玉,张岳明,颜 伟,等.机车辅助电源控制端静电放电问题处理方法研究[J].南京师范大学学报(工程技术版),2013,13(01):011.
　Dou Aiyu,Zhang Yueming,Yan Wei,et al.Study of the Treatment Method for ESD Problems of the Console Terminal of Locomotive Auxiliary Power[J].Journal of Nanjing Normal University(Engineering and Technology),2013,13(04):011.
[3]陈向阳,杨　雄,周孟夏,等.一种静电问题处理方法分析与应用[J].南京师范大学学报(工程技术版),2016,16(02):035.[doi:10.3969/j.issn.1672-1292.2016.02.006]
　Chen Xiangyang,Yang Xiong,Zhou Mengxia,et al.Analysis and Application of an Electrostatic Problem[J].Journal of Nanjing Normal University(Engineering and Technology),2016,16(04):035.[doi:10.3969/j.issn.1672-1292.2016.02.006]
[4]吴　斌,陶　卫,张　涛,等.基于集中抄表的静电放电问题的分析与应用[J].南京师范大学学报(工程技术版),2016,16(03):010.[doi:10.3969/j.issn.1672-1292.2016.03.002]
　Wu Bin,Tao Wei,Zhang Tao,et al.Analysis and Application of the Electrostatic Discharge ProblemBased on a Centralized Meter Reading[J].Journal of Nanjing Normal University(Engineering and Technology),2016,16(04):010.[doi:10.3969/j.issn.1672-1292.2016.03.002]
[5]吴 斌,陶 卫,赵 阳,等.基于TVS的电子设备ESD保护方法研究[J].南京师范大学学报(工程技术版),2017,17(02):019.[doi:10.3969/j.issn.1672-1292.2017.02.003]
　Wu Bin,Tao Wei,Zhao Yang,et al.Research on Electrostatic Discharge Protection Method ofElectronic Equipment Based on the TVS[J].Journal of Nanjing Normal University(Engineering and Technology),2017,17(04):019.[doi:10.3969/j.issn.1672-1292.2017.02.003]
[6]桑 健,赵 阳,高 翔,等.基于结构处理的电子设备ESD防护方法研究[J].南京师范大学学报(工程技术版),2017,17(04):001.[doi:10.3969/j.issn.1672-1292.2017.04.001]
　Sang Jian,Zhao Yang,Gao Xiang,et al.Research on Electrostatic Discharge Protection Method ofElectronic Equipment Based on Structure Processing[J].Journal of Nanjing Normal University(Engineering and Technology),2017,17(04):001.[doi:10.3969/j.issn.1672-1292.2017.04.001]
[7]万 毅,张瀚文,颜 伟,等.ESD脉冲辐射电磁场瞬态仿真与分析[J].南京师范大学学报(工程技术版),2017,17(04):007.[doi:10.3969/j.issn.1672-1292.2017.04.002]
　Wan Yi,Zhang Hanwen,Yan Wei,et al.Transient Simulation and Analysis of ElectrostaticDischarge Pulse Electromagnetic Field[J].Journal of Nanjing Normal University(Engineering and Technology),2017,17(04):007.[doi:10.3969/j.issn.1672-1292.2017.04.002]

备注/Memo

备注/Memo:
收稿日期:2019-09-10.
基金项目:国家自然科学基金(U1866212).
通讯联系人:赵军伟,工程师,研究方向:芯片可靠性及失效分析等方面的研究. E-mail:zhaojunwei@sgitg.sgcc.com.cn
更新日期/Last Update: 2019-12-31